Silicon photomultiplier - Revision history

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KDort: Created page with "'''Silicon photomultipliers''' (abbrev. '''SiPM''') are photon-sensitive detectors operating as '''Single-photon avalanche diodes''' ('''SPAD'''). TOC"

2020-04-04T08:17:20Z

Created page with "'''Silicon photomultipliers''' (abbrev. '''SiPM''') are photon-sensitive detectors operating as '''Single-photon avalanche diodes''' ('''SPAD'''). __TOC__"

New page

'''Silicon photomultipliers''' (abbrev. '''SiPM''') are photon-sensitive detectors operating as '''Single-photon avalanche diodes''' ('''SPAD''').

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 == Principle of Photodiodes ==
 A SiPM detector is formed by a pixelated matrix of photodiodes. Each photodiode consists of a junction of positively and negatively doped silicon ('''p-n junction'''). A depleted region which is devoid of free charge carriers is formed in between the differently doped silicon materials. By applying a reverse-voltage to the photodiodes, the depleted region can be enlarged to extend through the entire sensor.
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 If the reverse-voltage is high enough to exceed the breakdown voltage of the p-n junction, the diode is said to operate in '''Geiger-mode'''. The energy of a single charge carrier accelerated by the electric field is sufficient to create additional electron-hole pairs which in turn liberate even more charge carriers. Ultimately, the multiplication process can lead to a self-sustaining avalanche.
 == SiPM Photosensors ==
 When combining a multitude of photodiodes designed and operated as described in the previous sections, a SiPM detector is formed. The size of individual pixels (or diodes) ranges from 10 to 100 micrometres.

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 == Principle of Photodiodes ==
 A SiPM detector is formed by a pixelated matrix of photodiodes. Each photodiode consists of a junction of positively and negatively doped silicon ('''p-n junction'''). A depleted region which is devoid of free charge carriers is formed in between the differently doped silicon materials. By applying a reverse-voltage to the photodiodes, the depleted region can be enlarged to extend through the entire sensor.
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 If the reverse-voltage is high enough to exceed the breakdown voltage of the p-n junction, the diode is said to operate in '''Geiger-mode'''. The energy of a single charge carrier accelerated by the electric field is sufficient to create additional electron-hole pairs which in turn liberate even more charge carriers. Ultimately, the multiplication process can lead to a self-sustaining avalanche.

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 == Principle of Photodiodes ==
 A SiPM detector is formed by a pixelated matrix of photodiodes. Each photodiode consists of a junction of positively and negatively doped silicon ('''p-n junction'''). A depleted region which is devoid of free charge carriers is formed in between the differently doped silicon materials. By applying a reverse-voltage to the photodiodes, the depleted region can be enlarged to extend through the entire sensor.
 [[File:Iv characteristic diode.png|frame|right|Current-Voltage characteristic of a diode. A SiPM operates in the Breakdown regime.]]
-The passage of ionizing radiation through a photodiode creates electron-hole pairs. These liberated charge carriers are accelerated by the electric field in the depleted region towards the anode (holes) or cathode (electrons). If the reverse-voltage is high enough to exceed the breakdown voltage of the p-n junction, the diode is said to operate in '''Geiger-mode'''. The energy of a single charge carrier accelerated by the electric field is sufficient to create additional electron-hole pairs which in turn liberate even more charge carriers. Ultimately, the multiplication process can lead to a self-sustaining avalanche.
+If the reverse-voltage is high enough to exceed the breakdown voltage of the p-n junction, the diode is said to operate in '''Geiger-mode'''. The energy of a single charge carrier accelerated by the electric field is sufficient to create additional electron-hole pairs which in turn liberate even more charge carriers. Ultimately, the multiplication process can lead to a self-sustaining avalanche.

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 A SiPM detector is formed by a pixelated matrix of photodiodes. Each photodiode consists of a junction of positively and negatively doped silicon ('''p-n junction'''). A depleted region which is devoid of free charge carriers is formed in between the differently doped silicon materials. By applying a reverse-voltage to the photodiodes, the depleted region can be enlarged to extend through the entire sensor.
-[[File:Iv characteristic diode.png|thumb|right|Current-Voltage characteristic of a diode. A SiPM operates in the Breakdown regime.]]
+[[File:Iv characteristic diode.png|frame|right|Current-Voltage characteristic of a diode. A SiPM operates in the Breakdown regime.]]
 The passage of ionizing radiation through a photodiode creates electron-hole pairs. These liberated charge carriers are accelerated by the electric field in the depleted region towards the anode (holes) or cathode (electrons). If the reverse-voltage is high enough to exceed the breakdown voltage of the p-n junction, the diode is said to operate in '''Geiger-mode'''. The energy of a single charge carrier accelerated by the electric field is sufficient to create additional electron-hole pairs which in turn liberate even more charge carriers. Ultimately, the multiplication process can lead to a self-sustaining avalanche.

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 A SiPM detector is formed by a pixelated matrix of photodiodes. Each photodiode consists of a junction of positively and negatively doped silicon ('''p-n junction'''). A depleted region which is devoid of free charge carriers is formed in between the differently doped silicon materials. By applying a reverse-voltage to the photodiodes, the depleted region can be enlarged to extend through the entire sensor.
-<gallery>
+[[File:Iv characteristic diode.png|thumb|right|Current-Voltage characteristic of a diode. A SiPM operates in the Breakdown regime.]]
 The passage of ionizing radiation through a photodiode creates electron-hole pairs. These liberated charge carriers are accelerated by the electric field in the depleted region towards the anode (holes) or cathode (electrons). If the reverse-voltage is high enough to exceed the breakdown voltage of the p-n junction, the diode is said to operate in '''Geiger-mode'''. The energy of a single charge carrier accelerated by the electric field is sufficient to create additional electron-hole pairs which in turn liberate even more charge carriers. Ultimately, the multiplication process can lead to a self-sustaining avalanche.

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		+	== Principle of Photodiodes ==
		+	A SiPM detector is formed by a pixelated matrix of photodiodes. Each photodiode consists of a junction of positively and negatively doped silicon ('''p-n junction'''). A depleted region which is devoid of free charge carriers is formed in between the differently doped silicon materials. By applying a reverse-voltage to the photodiodes, the depleted region can be enlarged to extend through the entire sensor.
		+
		+	The passage of ionizing radiation through a photodiode creates electron-hole pairs. These liberated charge carriers are accelerated by the electric field in the depleted region towards the anode (holes) or cathode (electrons). If the reverse-voltage is high enough to exceed the breakdown voltage of the p-n junction, the diode is said to operate in '''Geiger-mode'''. The energy of a single charge carrier accelerated by the electric field is sufficient to create additional electron-hole pairs which in turn liberate even more charge carriers. Ultimately, the multiplication process can lead to a self-sustaining avalanche.