Kim at 18:59, 5 January 2021

2021-01-05T18:59:26Z

Kim: Created page with "'''Silicon photomultipliers''' (abbrev. '''SiPM''') are photon-sensitive detectors operating as '''Single-photon avalanche diodes''' ('''SPAD'''). TOC == Principle of..."

2021-01-05T18:50:05Z

Created page with "'''Silicon photomultipliers''' (abbrev. '''SiPM''') are photon-sensitive detectors operating as '''Single-photon avalanche diodes''' ('''SPAD'''). __TOC__ == Principle of..."

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'''Silicon photomultipliers''' (abbrev. '''SiPM''') are photon-sensitive detectors operating as '''Single-photon avalanche diodes''' ('''SPAD''').

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== Principle of Photodiodes ==
A SiPM detector is formed by a pixelated matrix of photodiodes. Each photodiode consists of a junction of positively and negatively doped silicon ('''p-n junction'''). A depleted region which is devoid of free charge carriers is formed in between the differently doped silicon materials. By applying a reverse-voltage to the photodiodes, the depleted region can be enlarged to extend through the entire sensor.
The passage of ionizing radiation through a photodiode creates electron-hole pairs. These liberated charge carriers are accelerated by the electric field in the depleted region towards the anode (holes) or cathode (electrons).

== The Geiger Mode ==
[[File:Iv characteristic diode.png|frame|right|Current-Voltage characteristic of a diode. A SiPM operates in the Breakdown regime.]]

If the reverse-voltage is high enough to exceed the breakdown voltage of the p-n junction, the diode is said to operate in '''Geiger-mode'''. The energy of a single charge carrier accelerated by the electric field is sufficient to create additional electron-hole pairs which in turn liberate even more charge carriers. Ultimately, the multiplication process can lead to a self-sustaining avalanche.
== SiPM Photosensors ==

When combining a multitude of photodiodes designed and operated as described in the previous sections, a SiPM detector is formed. The size of individual pixels (or diodes) ranges from 10 to 100 micrometres.

@@ Line 1: / Line 1: @@
-'''Silicon photomultipliers''' (abbrev. '''SiPM''') are photon-sensitive detectors operating as '''Single-photon avalanche diodes''' ('''SPAD''').
+'''Silizium-Photomultiplier''' (kurz '''SiPM''') sind photonenempfindliche Detektoren, die als '''Single-Photon-Avalanche-Dioden''' ('''SPAD''') arbeiten.
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-== Principle of Photodiodes ==
+==  Prinzip von Photodioden ==
-A SiPM detector is formed by a pixelated matrix of photodiodes. Each photodiode consists of a junction of positively and negatively doped silicon ('''p-n junction'''). A depleted region which is devoid of free charge carriers is formed in between the differently doped silicon materials. By applying a reverse-voltage to the photodiodes, the depleted region can be enlarged to extend through the entire sensor.
+Ein SiPM-Detektor wird durch eine gepixelte Matrix von Photodioden gebildet. Jede Photodiode besteht aus einem Übergang aus positiv und negativ dotiertem Silizium ('''p-n-Übergang'''). Zwischen den unterschiedlich dotierten Siliziummaterialien bildet sich ein verarmter Bereich, der frei von freien Ladungsträgern ist. Durch Anlegen einer Sperrspannung an die Photodioden kann der verarmte Bereich vergrößert werden, so dass er sich über den gesamten Sensor erstreckt.
-The passage of ionizing radiation through a photodiode creates electron-hole pairs. These liberated charge carriers are accelerated by the electric field in the depleted region towards the anode (holes) or cathode (electrons).
+Beim Durchgang von ionisierender Strahlung durch eine Photodiode entstehen Elektronen-Loch-Paare. Diese freigesetzten Ladungsträger werden durch das elektrische Feld im verarmten Bereich in Richtung Anode (Löcher) oder Kathode (Elektronen) beschleunigt.
-== The Geiger Mode ==
+== Der Geiger-Modus ==
-[[File:Iv characteristic diode.png|frame|right|Current-Voltage characteristic of a diode. A SiPM operates in the Breakdown regime.]]
+[[File:Iv characteristic diode.png|frame|right|Strom-Spannungs-Kennlinie einer Diode. Ein SiPM arbeitet im Durchbruchsbereich.]]
-If the reverse-voltage is high enough to exceed the breakdown voltage of the p-n junction, the diode is said to operate in '''Geiger-mode'''. The energy of a single charge carrier accelerated by the electric field is sufficient to create additional electron-hole pairs which in turn liberate even more charge carriers. Ultimately, the multiplication process can lead to a self-sustaining avalanche.
+Wenn die Sperrspannung hoch genug ist, um die Durchbruchspannung des p-n-Übergangs zu überschreiten, arbeitet die Diode im '''Geiger-Modus'''. Die Energie eines einzelnen Ladungsträgers, der durch das elektrische Feld beschleunigt wird, reicht aus, um weitere Elektronen-Loch-Paare zu erzeugen, die wiederum noch mehr Ladungsträger freisetzen. Letztlich kann der Vervielfältigungsprozess zu einer sich selbst erhaltenden Lawine führen
-When combining a multitude of photodiodes designed and operated as described in the previous sections, a SiPM detector is formed. The size of individual pixels (or diodes) ranges from 10 to 100 micrometres.
+== SiPM-Fotosensoren ==

Silicon photomultiplier de - Revision history

Kim at 18:59, 5 January 2021

Kim: Created page with "'''Silicon photomultipliers''' (abbrev. '''SiPM''') are photon-sensitive detectors operating as '''Single-photon avalanche diodes''' ('''SPAD'''). __TOC__ == Principle of..."

Kim: Created page with "'''Silicon photomultipliers''' (abbrev. '''SiPM''') are photon-sensitive detectors operating as '''Single-photon avalanche diodes''' ('''SPAD'''). TOC == Principle of..."